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Abstract—The conventional RC lumped thermal networks are
widely used to estimate the temperature of power devices, but
they lack of accuracy in addressing detailed thermal
behaviors/couplings in different locations and layers of the high
power IGBT modules. On the other hand, Finite Element (FE)-
based simulation is another method which is often used to
analyze the steady-state thermal distribution of IGBT modules,
but it is not possible to be used for long-term analysis of load
profiles of power converter, which is needed for reliability
assessments and better thermal design. This paper proposes a
novel three-dimensional RC lumped thermal network for the
high power IGBT modules. The thermal-coupling effects among
the chips and among the critical layers are modeled, and
boundary conditions including the cooling conditions are also
taken into account. It is demonstrated that the proposed thermal
model enables both accurate and fast temperature estimation of
high power IGBT modules in the real loading conditions of the
converter while maintaining the critical details of the thermal
dynamics and thermal distribution. The proposed thermal model
is verified by both FE-based simulation and experimental results.
Index Terms—Finite element method (FEM), insulated gate
bipolar transistor (IGBT), mission profile, power semiconductor,
reliability, thermal model.
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